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October 2006
HYS72T256000ER-3.7-B HYS72T256000ER-5-B
240-Pin Registered DDR2 SDRAM Modules DDR2 SDRAM RDIMM SDRAM RoHS Compliant
Internet Data Sheet
Rev. 1.0
Internet Data Sheet
HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
HYS72T256000ER-3.7-B, HYS72T256000ER-5-B Revision History: 2006-10, Rev. 1.0 Page All All Subjects (major changes since last revision) Adapted internet edition Final document
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qag_techdoc_rev400 / 3.2 QAG / 2006-08-07 10202006-EHWJ-OT02
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Internet Data Sheet
HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
1
Overview
This chapter gives an overview of the 240-Pin Registered DDR2 SDRAM Modules product family and describes its main characteristics.
1.1
Features
* Average Refresh Period 7.8 s at a TCASE lower than 85C, 3.9s between 85C and 95C. * Programmable self refresh rate via EMRS2 setting * Programmable partial array refresh via EMRS2 settings * DCC enabling via EMRS2 setting * All inputs and outputs SSTL_1.8 compatible * Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT) * Serial Presence Detect with E2PROM * RDIMM Dimensions (nominal): 30 mm high and 133.35 mm wide * Based on standard reference layouts Raw Card "H" * RoHS compliant products1)
* 240-Pin PC2-4200 and PC2-3200 DDR2 SDRAM memory modules. * 256M x72 module organization and 256M x 4 chip organization * Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V ( 0.1 V) power supply * 2 GB Built with 1Gbit DDR2 SDRAMs in P-TFBGA-68-6 chipsize packages * All speed grades faster than DDR2-400 comply with DDR2-400 timing specifications. * Programmable CAS Latencies (3, 4 and 5), Burst Length (8 & 4) and Burst Type * Auto Refresh (CBR) and Self Refresh
TABLE 1
Performance Table
Product Type Speed Code Speed Grade Max. Clock Frequency @CL5 @CL4 @CL3 Min. RAS-CAS-Delay Min. Row Precharge Time Min. Row Active Time Min. Row Cycle Time -3.7 PC2-4200 4-4-4 -5 PC2-3200 3-3-3 200 200 200 15 15 45 60 Unit -- MHz MHz MHz ns ns ns ns
fCK5 fCK4 fCK3 tRCD tRP tRAS tRC
266 266 200 15 15 45 60
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
1.2
Description
one cycle to the SDRAM timing. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and are write protected; the second 128 bytes are available to the customer.
The QIMONDA HYS72T256000ER-[3.7/5]-B module family are Registered DIMM modules "RDIMMs" with 30 mm height based on DDR2 technology. DIMMs are available ECC modules in 256M x 72 (2 GB) organization and density, intended for mounting into 240-pin connector sockets. The memory array is designed with 1-Gbit Double-Data-RateTwo (DDR2) Synchronous DRAMs. All control and address
signals are re-driven on the DIMM using register devices and a PLL for the clock distribution. This reduces capacitive loading to the system bus, but adds
TABLE 2
Ordering Information for RoHS Compliant Products
Product Type PC2-4200 HYS72T256000ER-3.7-B PC2-3200 HYS72T256000ER-5-B 2 GB 1Rx4 PC2-3200R-333-12-H0 1 Ranks, ECC 1 Gbit (x4)
1) All Product Type numbers end with a place code, designating the silicon die revision. Example: HYS72T256000ER-3.7-B, indicating Rev. "B" dies are used for DDR2 SDRAM components. For all Qimonda DDR2 module and component nomenclature see Chapter 6 of this data sheet. 2) The Compliance Code is printed on the module label and describes the speed grade, for example "PC2-4200R-444-12-H0", where 4200R means Unbuffered DIMM modules with 4.26 GB/sec Module Bandwidth and "444-12" means Column Address Strobe (CAS) latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2 and produced on the Raw Card "H".
1)
Compliance Code
2)
Description
SDRAM Technology 1 Gbit (x4)
2 GB 1Rx4 PC2-4200R-444-12-H0
1 Ranks, ECC
TABLE 3
Address Format
DIMM Density 2 GByte Module Organization 256M x 72 Memory Ranks 1 ECC/ Non-ECC ECC # of SDRAMs # of row/bank/column bits 18 14/3/11 Raw Card H
TABLE 4
Components on Modules
Product Type
1)
DRAM Components HYB18T1G400BF
1)
DRAM Density 1 Gbit
DRAM Organisation 256M x 4
Note2)
HYS72T256000ER
1) Green Product 2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
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2
2.1
Chip Configuration
Chip Configuration
Table 6 and Table 7 respectively. The ball numbering is depicted in Figure 1.
This chapter contains the ball configuration.
The ball configuration of the Registered DDR2 SDRAM DIMM is listed by function in Table 5 (240 balls). The abbreviations used in columns ball and Buffer Type are explained in
TABLE 5
Ball Configuration of RDIMM
Ball No. Clock Signals 185 186 52 171 CK0 CK0 CKE0 CKE1 NC Control Signals 193 76 S0 S1 NC 192 74 73 18 Address Signals 71 190 54 BA0 BA1 BA2 NC I I I I SSTL SSTL SSTL SSTL Bank Address Bus 2 Greater than 512Mb DDR2 SDRAMS Not Connected Less than 1Gb DDR2 SDRAMS Bank Address Bus 1:0 RAS CAS WE RESET I I NC I I I I SSTL SSTL -- SSTL SSTL SSTL CMOS Register Reset Chip Select Rank 1:0 Note: 2-Ranks module Not Connected Note: 1-Rank module Row Address Strobe (RAS), Column Address Strobe (CAS), Write Enable (WE) I I I I NC SSTL SSTL SSTL SSTL -- Clock Enables 1:0 Note: 2-Ranks module Not Connected Note: 1-Rank module Clock Signal CK0, Complementary Clock Signal CK0 Name Pin Type Buffer Type Function
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Ball No. 188 183 63 182 61 60 180 58 179 177 70 57 176 196
Name A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 AP A11 A12 A13 NC
Pin Type I I I I I I I I I I I I I I I NC I NC I NC
Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL -- SSTL -- SSTL --
Function Address Bus 12:0, Address Signal 10/AutoPrecharge
Address Signal 13 Not Connected Note: Non CA parity modules based on 256 Mbit component Address Signal 14 Note: CA Parity module Not Connected Note: Non CA parity module. Less than 1 GBit per DRAM die. Address Signal 14 Note: CA Parity module Not Connected Note: Non CA parity module. Less than 1 GBit per DRAM die.
174
A14 NC
173
A15 NC
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Ball No. Data Signals 3 4 9 10 122 123 128 129 12 13 21 22 131 132 140 141 24 25 30 31 143 144 149 150 33 34 39 40 152 153 158 159 80 81 86 87 199 200 205
Name
Pin Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL
Function
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38
Data Bus 63:0 Data Input/Output balls
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Ball No. 206 89 90 95 96 208 209 214 215 98 99 107 108 217 218 226 227 110 111 116 117 229 230 235 236 Check Bits 42 43 48 49 161 162 167 168
Name DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7
Pin Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL
Function Data Bus 63:0
Check Bits 7:0 Note: NC on Non-ECC module
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Ball No. Data Strobe Bus 7 6 16 15 28 27 37 36 84 83 93 92 105 104 114 113 46 45 125 126 134 135 146 147 155 156 202 203 211 212 223 224 232 233 164 165
Name
Pin Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL
Function
DQS0 DQS0 DQS1 DQS1 DQS2 DQS2 DQS3 DQS3 DQS4 DQS4 DQS5 DQS5 DQS6 DQS6 DQS7 DQS7 DQS8 DQS8 DQS9 DQS9 DQS10 DQS10 DQS11 DQS11 DQS12 DQS12 DQS13 DQS13 DQS14 DQS14 DQS15 DQS15 DQS16 DQS16 DQS17 DQS17
Data Strobes 17:0
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Ball No. Data Mask 125 134 146 155 202 211 223 232 164 EEPROM 120 119 239 240 101 Parity 55 Power Supplies 1 238 51, 56, 62, 72, 75, 78, 170, 175,, 181, 191, 194 53, 59, 64, 67, 69, 172, 178, 184,, 187, 189, 197
Name
Pin Type I I I I I I I I I I I/O I I I O I AI PWR PWR
Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL CMOS OD CMOS CMOS CMOS CMOS CMOS -- -- --
Function
DM0 DM1 DM2 DM3 DM4 DM5 DM6 DM7 DM8 SCL SDA SA0 SA1 SA2 ERR_OUT PAR_IN
Data Masks 8:0 Note: x8 based module
Serial Bus Clock Serial Bus Data Serial Address Select Bus 2:0
Parity bits
VREF VDDSPD VDDQ
I/O Reference Voltage EEPROM Power Supply I/O Driver Power Supply
VDD
PWR
--
Power Supply
2, 5, 8, 11, 14, 17, VSS 20, 23, 26, 29, 32, 35, 38, 41, 44, 47, 50, 65, 66, 79, 82, 85, 88, 91, 94, 97, 100, 103, 106, 109, 112, 115, 118, 121, 124, 127, 130, 133, 136, 139, 142, 145, 148, 151, 154, 157, 160, 163, 166, 169, 198, 201, 204, 207, 210, 213, 216, 219, 222, 225, 228, 231, 234, 237
GND
--
Ground Plane
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Ball No. Other balls
Name
Pin Type NC
Buffer Type --
Function
19, 55, 68, 102, NC 137, 138, 173, 220, 221 195 77 ODT0 ODT1 NC
Not connected
I I NC
SSTL SSTL --
On-Die Termination Control 1:0 Note: 2-Ranks module Note: 1-Rank modules
TABLE 6
Abbreviations for Buffer Type
Abbreviation SSTL CMOS OD Description Serial Stub Terminated Logic (SSTL_18) CMOS Levels Open Drain. The corresponding ball has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-OR.
TABLE 7
Abbreviations for ball Type
Abbreviation I O I/O AI PWR GND NU NC Description Standard input-only ball. Digital levels. Output. Digital levels. I/O is a bidirectional input/output signal. Input. Analog levels. Power Ground Not Usable Not Connected
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
FIGURE 1
Ball Configuration for RDIMM (240 balls)
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3
3.1
Electrical Characteristics
Absolute Maximum Ratings
TABLE 8
Absolute Maximum Ratings
This chapter lists the electrical characteristics.
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.
Symbol
Parameter
Rating Min. Max. +2.3 +2.3 +2.3 +2.3
Unit
Note
Storage Temperature -55 +100 1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
VDD VDDQ VDDL VIN, VOUT TSTG
Voltage on VDD pin relative to VSS Voltage on VDDQ pin relative to VSS Voltage on VDDL pin relative to VSS Voltage on any pin relative to VSS
-1.0 -0.5 -0.5 -0.5
V V V V C
1) 1)2) 1)2) 1) 1)2)
Attention: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
DRAM Component Operating Temperature Range
Symbol Parameter Rating Min. Max. 95 C
1)2)3)4)
Unit
Note
TOPER
Operating Temperature
0
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM. 2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case temperature must be maintained between 0 - 95 C under all other specification parameters. 3) Above 85 C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 s 4) When operating this product in the 85 C to 95 C TCASE temperature range, the High Temperature Self Refresh has to be enabled by setting EMR(2) bit A7 to "1". When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%
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3.2
DC Operating Conditions
TABLE 10
Operating Conditions
This chapter contains the DC operating conditions tables.
Parameter
Symbol
Values Min. Max. +65 +95 +100 +105 90
Unit
Note
Operating temperature (ambient) DRAM Case Temperature Storage Temperature Barometric Pressure (operating & storage) Operating Humidity (relative)
1) 2) 3) 4)
TOPR TCASE TSTG
PBar
0 0 - 50 +69 10
C C C kPa %
5) 1)2)3)4)
HOPR
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. Within the DRAM Component Case Temperature Range all DRAM specifications will be supported Above 85 C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 s When operating this product in the 85 C to 95 C TCASE temperature range, the High Temperature Self Refresh has to be enabled by setting EMR(2) bit A7 to "1". When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%. 5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter Symbol Values Min. Device Supply Voltage Output Supply Voltage Input Reference Voltage SPD Supply Voltage DC Input Logic High DC Input Logic Low Typ. 1.8 1.8 0.5 x VDDQ -- -- -- Max. 1.9 1.9 0.51 x VDDQ 3.6 V V V V V V
3) 1) 2)
Unit
Note
In / Output Leakage Current -5 -- 5 A 1) Under all conditions, VDDQ must be less than or equal to VDD 2) Peak to peak AC noise on VREF may not exceed 2% VREF (DC).VREF is also expected to track noise in VDDQ. 3) Input voltage for any connector pin under test of 0 V VIN VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
VDD VDDQ VREF VDDSPD VIH(DC) VIL (DC) IL
1.7 1.7 0.49 x VDDQ 1.7
VREF + 0.125
- 0.30
VDDQ + 0.3 VREF - 0.125
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3.3
Timing Characteristics
This chapter describes the timing characteristics.
3.3.1
Speed Grade Definitions
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(tCK = 5ns with tRAS = 40ns). Speed Grade Definitions: Table 12 for DDR2-533C and Table 13 for DDR2-400B
TABLE 12
Speed Grade Definition Speed Bins for DDR2-533C
Speed Grade QAG Sort Name CAS-RCD-RP latencies Parameter Clock Frequency @ CL = 3 @ CL = 4 @ CL = 5 Row Active Time Row Cycle Time RAS-CAS-Delay Row Precharge Time Symbol DDR2-533C -3.7 4-4-4 Min. 5 3.75 3.75 45 60 15 15 Max. 8 8 8 70000 -- -- -- Unit Note
tCK
-- ns ns ns ns ns ns ns
1)2)3)4) 1)2)3)4) 1)2)3)4) 1)2)3)4)5) 1)2)3)4) 1)2)3)4) 1)2)3)4)
tCK tCK tCK tRAS tRC tRCD tRP
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal OCD drive strength (EMRS(1) A1 = 0) 2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS, input reference level is the crosspoint when in differential strobe mode. 3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 4) The output timing reference voltage level is VTT. 5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
TABLE 13
Speed Grade Definition Speed Bins for DDR2-400B
Speed Grade QAG Sort Name CAS-RCD-RP latencies Parameter Clock Frequency @ CL = 3 @ CL = 4 @ CL = 5 Row Active Time Symbol DDR2-400B -5 3-3-3 Min. 5 5 5 40 Max. 8 8 8 70000 tCK -- ns ns ns ns
1)2)3)4) 1)2)3)4) 1)2)3)4) 1)2)3)4)5)
Unit
Note
tCK tCK tCK tRAS
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Speed Grade QAG Sort Name CAS-RCD-RP latencies Parameter Row Cycle Time RAS-CAS-Delay Row Precharge Time Symbol DDR2-400B -5 3-3-3 Min. 55 15 15 Max. -- -- -- tCK -- ns ns ns
1)2)3)4) 1)2)3)4) 1)2)3)4)
Unit
Note
tRC tRCD tRP
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal OCD drive strength (EMRS(1) A1 = 0) . 2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS, input reference level is the crosspoint when in differential strobe mode 3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 4) The output timing reference voltage level is VTT. 5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
3.3.2
Component AC Timing Parameters
TABLE 14
DRAM Component Timing Parameter by Speed Grade - DDR2-533
Timing Parameters: Table 14 for DDR2-533C and Table 15 for DDR2-400B
Parameter
Symbol
DDR2-533 Min. Max. +500 -- 0.55 -- 0.55 -- -- -- -- -- +450 -- 300 + 0.25
Unit
Note1)2)3)4)5)
6)7)
DQ output access time from CK / CK CAS A to CAS B command period CK, CK high-level width CKE minimum high and low pulse width CK, CK low-level width Auto-Precharge write recovery + precharge time Minimum time clocks remain ON after CKE asynchronously drops LOW DQ and DM input hold time (differential data strobe)
tAC tCCD tCH tCKE tCL tDAL tDELAY tDH(base)
-500 2 0.45 3 0.45 WR + tRP
ps
tCK tCK tCK tCK tCK
ns ps ps
8)18)
tIS + tCK + tIH
225 -25 0.35 -450 0.35 -- - 0.25
9)
10)
DQ and DM input hold time (single ended data tDH1(base) strobe) DQ and DM input pulse width (each input) DQS output access time from CK / CK DQS input low (high) pulse width (write cycle) DQS-DQ skew (for DQS & associated DQ signals) Write command to 1st DQS latching transition
11)
tDIPW tDQSCK tDQSL,H tDQSQ tDQSS
tCK
ps
tCK
ps
11)
tCK
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Parameter
Symbol
DDR2-533 Min. Max. -- -- -- -- -- --
Unit
Note1)2)3)4)5)
6)7)
DQ and DM input setup time (differential data strobe)
tDS(base)
100 -25 0.2 0.2 37.5 50 MIN. (tCL, tCH) -- 375 0.6 250 2 x tAC.MIN
ps ps
11)
DQ and DM input setup time (single ended data tDS1(base) strobe) DQS falling edge hold time from CK (write cycle) Four Activate Window period Clock half period Data-out high-impedance time from CK / CK Address and control input hold time Address and control input pulse width (each input) Address and control input setup time DQ low-impedance time from CK / CK DQS low-impedance from CK / CK Mode register set command cycle time OCD drive mode output delay Data output hold time from DQS Data hold skew factor Average periodic refresh Interval Auto-Refresh to Active/Auto-Refresh command period Precharge-All (4 banks) command period Precharge-All (8 banks) command period Read preamble Read postamble Active bank A to Active bank B command period Internal Read to Precharge command delay Write preamble Write postamble Write recovery time for write without AutoPrecharge Write recovery time for write with AutoPrecharge Internal Write to Read command delay Exit power down to any valid command (other than NOP or Deselect)
11)
tDSH
tCK tCK
ns ns -- ps ps
13) 12) 13) 11)
DQS falling edge to CK setup time (write cycle) tDSS
tFAW tHP tHZ tIH(base) tIPW tIS(base) tLZ(DQ) tLZ(DQS) tMRD tOIT tQH tQHS tREFI tRFC tRP tRP tRPRE tRPST tRRD tRTP tWPRE tWPST tWR
WR
tAC.MAX
-- -- --
tCK
ps ps ps
11) 14) 14)
tAC.MIN
2 0
tAC.MAX tAC.MAX
-- 12 -- 400 7.8 3.9 -- -- -- 1.1 0.60 -- -- -- -- 0.60 -- -- -- --
tCK
ns -- ps s s ns ns ns
14)15) 16)18) 17)
tHP -tQHS
-- -- -- 127.5
tRP + 1tCK
15 + 1tCK 0.9 0.40 7.5 10 7.5 0.25 x tCK 0.40 15
tCK tCK
ns ns ns
14) 14) 14)18) 16)20)
tCK tCK
ns
19)
tWR/tCK
7.5 2
tCK
ns
20)
tWTR tXARD
21) 22)
tCK
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HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Parameter
Symbol
DDR2-533 Min. Max. -- -- -- --
Unit
Note1)2)3)4)5)
6)7)
Exit active power-down mode to Read command (slow exit, lower power) Exit precharge power-down to any valid command (other than NOP or Deselect) Exit Self-Refresh to non-Read command Exit Self-Refresh to Read command
tXARDS tXP tXSNR tXSRD
6 - AL 2
tCK tCK
ns
22)
tRFC +10
200
tCK
1) For details and notes see the relevant Qimonda component data sheet 2) VDDQ = 1.8 V 0.1 V; VDD = 1.8 V 0.1 V. See notes 5)6)7)8) 3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down and then restarted through the specified initialization sequence before normal operation can continue. 4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. 5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode. 6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 7) The output timing reference voltage level is VTT. 8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MR. 9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. 10) For timing definition, refer to the Component data sheet. 11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate mis-match between DQS / DQS and associated DQ in any given cycle. 12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving (tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These parameters are verified by design and characterization, but not subject to production test. 14) The Auto-Refresh command interval has be reduced to 3.9 s when operating the DDR2 DRAM in a temperature range between 85 C and 95 C. 15) 0 C TCASE 85 C 16) 85 C < TCASE 95 C 17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device. 18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 "Ordering Information for RoHS Compliant Products" on Page 4. 19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MRS. 21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies 200 z. 22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In "standard active powerdown mode" (MR, A12 = "0") a fast power-down exit timing tXARD can be used. In "low active power-down mode" (MR, A12 ="1") a slow power-down exit timing tXARDS has to be satisfied.
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TABLE 15
DRAM Component Timing Parameter by Speed Grade - DDR2-400
Parameter Symbol DDR2-400 Min. DQ output access time from CK / CK CAS A to CAS B command period CK, CK high-level width CKE minimum high and low pulse width CK, CK low-level width Auto-Precharge write recovery + precharge time Minimum time clocks remain ON after CKE asynchronously drops LOW DQ and DM input hold time (differential data strobe) Max. +600 -- 0.55 -- 0.55 -- -- -- -- -- +500 -- 350 + 0.25 -- -- -- -- -- -- ps Unit Note1)2)3)4)5)
6)7)
tAC tCCD tCH tCKE tCL tDAL tDELAY tDH(base)
-600 2 0.45 3 0.45 WR + tRP
tCK tCK tCK tCK tCK
ns ps ps
8)22)
tIS + tCK + tIH
275 -25 0.35 -500 0.35 -- - 0.25 150 -25 0.2 0.2 37.5 50 MIN. (tCL, tCH) -- 475 0.6 350 2 x tAC.MIN
9)
10)
DQ and DM input hold time (single ended data tDH1(base) strobe) DQ and DM input pulse width (each input) DQS output access time from CK / CK DQS input low (high) pulse width (write cycle) DQS-DQ skew (for DQS & associated DQ signals) DQ and DM input setup time (differential data strobe) DQ and DM input setup time (single ended data strobe) DQS falling edge hold time from CK (write cycle) Four Activate Window period Clock half period Data-out high-impedance time from CK / CK Address and control input hold time Address and control input pulse width (each input) Address and control input setup time DQ low-impedance time from CK / CK DQS low-impedance from CK / CK Mode register set command cycle time OCD drive mode output delay Data output hold time from DQS
11)
tDIPW tDQSCK tDQSL,H tDQSQ
tCK
ps
tCK
ps
11)
Write command to 1st DQS latching transition tDQSS
tCK
ps ps
11)
tDS(base) tDS1(base) tDSH
11)
tCK tCK
ns ns ps ps
13) 12)
DQS falling edge to CK setup time (write cycle) tDSS
tFAW tHP tHZ tIH(base) tIPW tIS(base) tLZ(DQ) tLZ(DQS) tMRD tOIT tQH
tAC.MAX
-- -- --
13) 11)
tCK
ps ps ps
11) 14) 14)
tAC.MIN
2 0
tAC.MAX tAC.MAX
-- 12 --
tCK
ns --
tHP -tQHS
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Parameter
Symbol
DDR2-400 Min. Max. 450 7.8 3.9 -- -- -- 1.1 0.60 -- -- -- -- 0.60 -- -- -- -- -- -- -- --
Unit
Note1)2)3)4)5)
6)7)
Data hold skew factor Average periodic refresh Interval Auto-Refresh to Active/Auto-Refresh command period Precharge-All (4 banks) command period Precharge-All (8 banks) command period Read preamble Read postamble Active bank A to Active bank B command period Internal Read to Precharge command delay Write preamble Write postamble Write recovery time for write without AutoPrecharge Write recovery time for write with AutoPrecharge Internal Write to Read command delay Exit power down to any valid command (other than NOP or Deselect) Exit active power-down mode to Read command (slow exit, lower power) Exit precharge power-down to any valid command (other than NOP or Deselect) Exit Self-Refresh to non-Read command Exit Self-Refresh to Read command
tQHS tREFI
-- -- -- 127.5
ps s s ns ns ns
14)15) 16)18) 17)
tRP tRP tRPRE tRPST tRRD tRTP tWPRE tWPST tWR
WR
tRP + 1tCK
15 + 1tCK 0.9 0.40 7.5 10 7.5 0.25 x tCK 0.40 15
tCK tCK
ns ns ns
14) 14) 14)18) 16)20)
tCK tCK
ns
19)
tWR/tCK
10 2 6 - AL 2
tCK
ns
20)
tWTR tXARD tXARDS tXP tXSNR tXSRD
21) 22)
tCK tCK tCK
ns
22)
tRFC +10
200
tCK
1) For details and notes see the relevant Qimonda component data sheet 2) VDDQ = 1.8 V 0.1 V; VDD = 1.8 V 0.1 V. See notes 5)6)7)8) 3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down and then restarted through the specified initialization sequence before normal operation can continue. 4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. 5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode. 6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 7) The output timing reference voltage level is VTT. 8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MR. 9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. 10) For timing definition, refer to the Component data sheet. 11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate mis-match between DQS / DQS and associated DQ in any given cycle. 12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH).
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13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving (tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These parameters are verified by design and characterization, but not subject to production test. 14) The Auto-Refresh command interval has be reduced to 3.9 s when operating the DDR2 DRAM in a temperature range between 85 C and 95 C. 15) 0 C TCASE 85 C 16) 85 C < TCASE 95 C 17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device. 18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 "Ordering Information for RoHS Compliant Products" on Page 4. 19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MRS. 21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies 200 z. 22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In "standard active powerdown mode" (MR, A12 = "0") a fast power-down exit timing tXARD can be used. In "low active power-down mode" (MR, A12 ="1") a slow power-down exit timing tXARDS has to be satisfied.
3.3.3
ODT AC Electrical Characteristics
TABLE 16
ODT AC Character. and Operating Conditions for DDR2-533 & DDR2-400
Symbol
Parameter / Condition
Values Min. Max. 2
Unit
Note
tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD
ODT turn-on delay ODT turn-on ODT turn-on (Power-Down Modes) ODT turn-off delay ODT turn-off ODT turn-off (Power-Down Modes) ODT to Power Down Mode Entry Latency ODT Power Down Exit Latency
2
tCK
ns ns
1)
tAC.MIN tAC.MIN + 2 ns
2.5
tAC.MAX + 1 ns 2 tCK + tAC.MAX + 1 ns
2.5
tCK
ns ns
2)
tAC.MIN tAC.MIN + 2 ns
3 8
tAC.MAX + 0.6 ns 2.5 tCK + tAC.MAX + 1 ns
-- --
tCK tCK
1) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns. 2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.
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3.4
IDD Specifications and Conditions
List of tables defining IDD Specifications and Conditions. * Table 17 "IDD Measurement Conditions" on Page 22 * Table 18 "Definitions for IDD" on Page 23 * Table 19 "IDD Specification for HYS72T256000ER-[3.7/5]-B" on Page 24
TABLE 17
IDD Measurement Conditions
Parameter Symbol Note
1)2)3)4)5)
Operating Current 0 IDD0 One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING. Operating Current 1 One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, tRCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
IDD1
6)
Precharge Standby Current IDD2N All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING, Databus inputs are SWITCHING. Precharge Power-Down Current Other control and address inputs are STABLE, Data bus inputs are FLOATING. Precharge Quiet Standby Current All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE, Data bus inputs are FLOATING. Active Standby Current Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN; tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD2P IDD2Q
IDD3N
Active Power-Down Current IDD3P(0) All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit); Active Power-Down Current IDD3P(1) All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit); Operating Current - Burst Read IDD4R All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX; tRP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data bus inputs are SWITCHING; IOUT = 0mA. Operating Current - Burst Write All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN; tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are SWITCHING; Data Bus inputs are SWITCHING; Burst Refresh Current tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
6)
IDD4W
IDD5B
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Parameter Distributed Refresh Current tCK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
Symbol Note
1)2)3)4)5)
IDD5D
Self-Refresh Current IDD6 CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 C max. All Bank Interleave Read Current IDD7 All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control and address bus inputs are STABLE during DESELECTS. Iout = 0 mA. 1) VDDQ = 1.8 V 0.1 V; VDD = 1.8 V 0.1 V 2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled. 3) Definitions for IDD see Table 18 4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P
6)
5) For details and notes see the relevant Qimonda component data sheet 6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.
TABLE 18
Definitions for IDD
Parameter LOW STABLE FLOATING SWITCHING Description
VIN VIL(ac).MAX, HIGH is defined as VIN VIH(ac).MIN
Inputs are stable at a HIGH or LOW level Inputs are VREF = VDDQ /2 Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ signals not including mask or strobes
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TABLE 19
IDD Specification for HYS72T256000ER-[3.7/5]-B
Product Type Organization HYS72T256000ER-3.7-B 2 GB x72 1 Ranks -3.7 HYS72T256000ER-5-B 2 GB x72 1 Ranks -5 2120 2210 620 1310 1220 1040 680 1400 2840 2840 3830 640 180 4280 mA mA mA mA mA mA mA mA mA mA mA mA mA
2) 2) 3) 3) 3) 3) 3)4) 3)5) 2) 2) 2) 3)6) 3)6)
Units
Note1)
2) mA 1) Module IDDis calculated on the basis of component IDDand includes currents of Registers and PLL. ODT disabled. IDD1, IDD4R, and IDD7, are
IDD0 IDD1 IDD2P IDD2N IDD2Q IDD3P_0 (fast) IDD3P_1 (slow) IDD3N IDD4R IDD4W IDD5B IDD5D IDD6 IDD7
2300 2390 720 1490 1400 1180 770 1580 3200 3200 4100 730 180 4550
2) 3) 4) 5) 6)
defined with the outputs disabled. The other rank is in IDD2P Precharge Power-Down Current mode Both ranks are in the same IDDcurrent mode Fast: MRS(12)=0 Slow: MRS(12)=1 IDD5D and IDD6 values are for 0C TCase 85C
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4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands for serial presence detect. All values with XX in the table are module specific bytes which are defined during production. List of SPD Code Tables * Table 20 "SPD Codes for PC2-4200-444 & PC2-3200-333" on Page 25
TABLE 20
SPD Codes for PC2-4200-444 & PC2-3200-333
Product Type Organization HYS72T256000ER-3.7-B 2 GByte x72 1 Rank (x4) Label Code JEDEC SPD Revision Byte# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Description Programmed SPD Bytes in EEPROM Total number of Bytes in EEPROM Memory Type (DDR2) Number of Row Addresses Number of Column Addresses DIMM Rank and Stacking Information Data Width Not used Interface Voltage Level PC2-4200R-444 Rev. 1.2 HEX 80 08 08 0E 0B 60 48 00 05 3D 50 02 82 04 04 00 0C 08 38 01 01 05 HYS72T256000ER-5-B 2 GByte x72 1 Rank (x4) PC2-3200R-333 Rev. 1.2 HEX 80 08 08 0E 0B 60 48 00 05 50 60 02 82 04 04 00 0C 08 38 01 01 05
tCK @ CLMAX (Byte 18) [ns] tAC SDRAM @ CLMAX (Byte 18) [ns]
Error Correction Support (non-ECC, ECC) Refresh Rate and Type Primary SDRAM Width Error Checking SDRAM Width Not used Burst Length Supported Number of Banks on SDRAM Device Supported CAS Latencies DIMM Mechanical Characteristics DIMM Type Information DIMM Attributes
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Product Type Organization
HYS72T256000ER-3.7-B 2 GByte x72 1 Rank (x4)
HYS72T256000ER-5-B 2 GByte x72 1 Rank (x4) PC2-3200R-333 Rev. 1.2 HEX 07 50 60 50 60 3C 1E 3C 28 02 35 47 15 27 3C 28 1E 00 06 37 7F 80 23 2D 0F 51 60 33 1D 2B 1C 2C 21
Label Code JEDEC SPD Revision Byte# 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 Description Component Attributes
PC2-4200R-444 Rev. 1.2 HEX 07 3D 50 50 60 3C 1E 3C 2D 02 25 37 10 22 3C 1E 1E 00 06 3C 7F 80 1E 28 0F 52 60 37 20 2B 20 35 21
tCK @ CLMAX -1 (Byte 18) [ns] tAC SDRAM @ CLMAX -1 [ns] tCK @ CLMAX -2 (Byte 18) [ns] tAC SDRAM @ CLMAX -2 [ns] tRP.MIN [ns] tRRD.MIN [ns] tRCD.MIN [ns] tRAS.MIN [ns]
Module Density per Rank
tAS.MIN and tCS.MIN [ns] tAH.MIN and tCH.MIN [ns] tDS.MIN [ns] tDH.MIN [ns] tWR.MIN [ns] tWTR.MIN [ns] tRTP.MIN [ns]
Analysis Characteristics
tRC and tRFC Extension tRC.MIN [ns] tRFC.MIN [ns] tCK.MAX [ns] tDQSQ.MAX [ns] tQHS.MAX [ns]
PLL Relock Time
TCASE.MAX Delta / T4R4W Delta
Psi(T-A) DRAM T0 (DT0) T2N (DT2N, UDIMM) or T2Q (DT2Q, RDIMM) T2P (DT2P) T3N (DT3N) T3P.fast (DT3P fast) T3P.slow (DT3P slow)
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Product Type Organization
HYS72T256000ER-3.7-B 2 GByte x72 1 Rank (x4)
HYS72T256000ER-5-B 2 GByte x72 1 Rank (x4) PC2-3200R-333 Rev. 1.2 HEX 2C 21 24 C4 8C 59 5C 12 FE 7F 7F 7F 7F 7F 51 00 00 xx 37 32 54 32 35 36 30 30 30 45 52 35 42 20 20
Label Code JEDEC SPD Revision Byte# 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 Description T4R (DT4R) / T4R4W Sign (DT4R4W) T5B (DT5B) T7 (DT7) Psi(ca) PLL Psi(ca) REG TPLL (DTPLL) TREG (DTREG) / Toggle Rate SPD Revision Checksum of Bytes 0-62 Manufacturer's JEDEC ID Code (1) Manufacturer's JEDEC ID Code (2) Manufacturer's JEDEC ID Code (3) Manufacturer's JEDEC ID Code (4) Manufacturer's JEDEC ID Code (5) Manufacturer's JEDEC ID Code (6) Manufacturer's JEDEC ID Code (7) Manufacturer's JEDEC ID Code (8) Module Manufacturer Location Product Type, Char 1 Product Type, Char 2 Product Type, Char 3 Product Type, Char 4 Product Type, Char 5 Product Type, Char 6 Product Type, Char 7 Product Type, Char 8 Product Type, Char 9 Product Type, Char 10 Product Type, Char 11 Product Type, Char 12 Product Type, Char 13 Product Type, Char 14 Product Type, Char 15
PC2-4200R-444 Rev. 1.2 HEX 36 22 25 C4 8C 61 78 12 C9 7F 7F 7F 7F 7F 51 00 00 xx 37 32 54 32 35 36 30 30 30 45 52 33 2E 37 42
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Product Type Organization
HYS72T256000ER-3.7-B 2 GByte x72 1 Rank (x4)
HYS72T256000ER-5-B 2 GByte x72 1 Rank (x4) PC2-3200R-333 Rev. 1.2 HEX 20 20 20 3x xx xx xx xx 00 FF
Label Code JEDEC SPD Revision Byte# 88 89 90 91 92 93 94 95 - 98 128 255 Description Product Type, Char 16 Product Type, Char 17 Product Type, Char 18 Module Revision Code Test Program Revision Code Module Manufacturing Date Year Module Manufacturing Date Week Module Serial Number Blank for customer use
PC2-4200R-444 Rev. 1.2 HEX 20 20 20 3x xx xx xx xx 00 FF
99 - 127 Not used
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5
Package Outlines
FIGURE 2
Package Outline Raw Card H LG-DIM-240-13
This chapter contains the package outlines of the products.
Notes 1. Drawing according to ISO 8015 2. Dimensions in mm 3. General tolerances +/- 0.15
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6
Product Type Nomenclature
Qimondas nomenclature uses simple coding combined with some propriatory coding. Table 21 provides examples for module and component product type number as well as the field number. The detailed field description together with possible values and coding explanation is listed for modules in Table 22 and for components in Table 23.
TABLE 21
Nomenclature Fields and Examples
Example for Field Number 1 Micro-DIMM DDR2 DRAM HYS HYB 2 64 18 3 T T 4 64/128 5 0 6 2 7 0 0 8 K A 9 M C 10 -5 -5 11 -A
512/1G 16
TABLE 22
DDR2 DIMM Nomenclature
Field 1 2 3 4 Description Qimonda Module Prefix Module Data Width [bit] DRAM Technology Memory Density per I/O [Mbit]; Module Density1) Values HYS 64 72 T 32 64 128 256 512 5 6 7 8 9 Raw Card Generation Number of Module Ranks Product Variations Package, Lead-Free Status Module Type 0 .. 9 0, 2, 4 0 .. 9 A .. Z D M R U F Coding Constant Non-ECC ECC DDR2 256 MByte 512 MByte 1 GByte 2 GByte 4 GByte Look up table 1, 2, 4 Look up table Look up table SO-DIMM Micro-DIMM Registered Unbuffered Fully Buffered
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Field 10
Description Speed Grade
Values -2.5F -2.5 -3 -3S -3.7 -5
Coding PC2-6400 5-5-5 PC2-6400 6-6-6 PC2-5300 4-4-4 PC2-5300 5-5-5 PC2-4200 4-4-4 PC2-3200 3-3-3 First Second
11
Die Revision
-A -B
1) Multiplying "Memory Density per I/O" with "Module Data Width" and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall module memory density in MBytes as listed in column "Coding".
TABLE 23
DDR2 DRAM Nomenclature
Field 1 2 3 4 Description Qimonda Component Prefix Interface Voltage [V] DRAM Technology Component Density [Mbit] Values HYB 18 T 256 512 1G 2G 5+6 Number of I/Os 40 80 16 7 8 9 10 Product Variations Die Revision Package, Lead-Free Status Speed Grade 0 .. 9 A B C F -25F -2.5 -3 -3S -3.7 -5 Coding Constant SSTL_18 DDR2 256 Mbit 512 Mbit 1 Gbit 2 Gbit x4 x8 x16 Look up table First Second FBGA, lead-containing FBGA, lead-free DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 4-4-4 DDR2-667 5-5-5 DDR2-533 4-4-4 DDR2-400 3-3-3
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Internet Data Sheet
HYS72T256000ER-[3.7/5]-B Registerd DDR2 SDRAM Module
Table of Contents
1 1.1 1.2 2 2.1 3 3.1 3.2 3.3 3.3.1 3.3.2 3.3.3 3.4 4 5 6 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chip Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Chip Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Speed Grade Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Component AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 14 15 15 16 21 22
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Rev. 1.0, 2006-10 10202006-EHWJ-OT02
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Internet Data Sheet
Edition 2006-10 Published by Qimonda AG Gustav-Heinemann-Ring 212 D-81739 Munchen, Germany (c) Qimonda AG 2006. All Rights Reserved. Legal Disclaimer The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Qimonda Office. Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. www.qimonda.com

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